Hlutanúmer : |
EPC2107ENGRT |
Framleiðandi / Vörumerki : |
EPC |
Lýsing : |
TRANS GAN 3N-CH 100V BUMPED DIE |
RoHs Staða : |
Leiða frjáls / RoHS samhæft |
Magn í boði |
33224 pcs |
Gagnablöð |
EPC2107ENGRT.pdf |
Vgs (th) (Max) @ Id |
2.5V @ 100µA, 2.5V @ 20µA |
Birgir Tæki Pakki |
9-BGA (1.35x1.35) |
Röð |
eGaN® |
Rds On (Max) @ Id, Vgs |
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Power - Max |
- |
Pökkun |
Tape & Reel (TR) |
Pakki / tilfelli |
9-VFBGA |
Önnur nöfn |
917-EPC2107ENGRTR |
Vinnuhitastig |
-40°C ~ 150°C (TJ) |
Uppsetningartegund |
Surface Mount |
Vöktunarnæmisstig (MSL) |
1 (Unlimited) |
Leiða frjáls staða / RoHS staða |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
16pF @ 50V, 7pF @ 50V |
Hliðargjald (Qg) (Hámark) @ Vgs |
0.16nC @ 5V, 0.044nC @ 5V |
FET tegund |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET eiginleiki |
GaNFET (Gallium Nitride) |
Afrennsli til uppspretta spenna (VDSS) |
100V |
nákvæm lýsing |
Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
Núverandi - Stöðug holræsi (Id) @ 25 ° C |
1.7A, 500mA |