Hlutanúmer : |
RN1911(T5L,F,T) |
Framleiðandi / Vörumerki : |
Toshiba Semiconductor and Storage |
Lýsing : |
TRANS 2NPN PREBIAS 0.1W US6 |
RoHs Staða : |
Leiða frjáls / RoHS samhæft |
Magn í boði |
5190 pcs |
Gagnablöð |
RN1911(T5L,F,T).pdf |
Spenna - Upplausn safnara (Max) |
50V |
Vce Mettun (Hámark) @ Ib, Ic |
300mV @ 250µA, 5mA |
Transistor Tegund |
2 NPN - Pre-Biased (Dual) |
Birgir Tæki Pakki |
US6 |
Röð |
- |
Mótstöðu - Emitter Base (R2) |
- |
Mótstöðu - Base (R1) |
4.7 kOhms |
Power - Max |
100mW |
Pökkun |
Tape & Reel (TR) |
Pakki / tilfelli |
6-TSSOP, SC-88, SOT-363 |
Önnur nöfn |
RN1911(T5LFT)TR |
Uppsetningartegund |
Surface Mount |
Vöktunarnæmisstig (MSL) |
1 (Unlimited) |
Leiða frjáls staða / RoHS staða |
Lead free / RoHS Compliant |
Tíðni - Umskipti |
250MHz |
nákvæm lýsing |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount US6 |
DC Núverandi Gain (hFE) (Min) @ Ic, Vce |
120 @ 1mA, 5V |
Núverandi - Safnari Cutoff (Max) |
100nA (ICBO) |
Núverandi - Safnari (Ic) (Hámark) |
100mA |