Hlutanúmer : | RN1964FE(TE85L,F) |
---|---|
Framleiðandi / Vörumerki : | Toshiba Semiconductor and Storage |
Lýsing : | TRANS 2NPN PREBIAS 0.1W ES6 |
RoHs Staða : | Leiða frjáls / RoHS samhæft |
Magn í boði | 453066 pcs |
Gagnablöð | RN1964FE(TE85L,F).pdf |
Spenna - Upplausn safnara (Max) | 50V |
Vce Mettun (Hámark) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Tegund | 2 NPN - Pre-Biased (Dual) |
Birgir Tæki Pakki | ES6 |
Röð | - |
Mótstöðu - Emitter Base (R2) | 47 kOhms |
Mótstöðu - Base (R1) | 47 kOhms |
Power - Max | 100mW |
Pökkun | Tape & Reel (TR) |
Pakki / tilfelli | SOT-563, SOT-666 |
Önnur nöfn | RN1964FE(TE85LF)TR RN1964FETE85LF |
Uppsetningartegund | Surface Mount |
Vöktunarnæmisstig (MSL) | 1 (Unlimited) |
Leiða frjáls staða / RoHS staða | Lead free / RoHS Compliant |
Tíðni - Umskipti | 250MHz |
nákvæm lýsing | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Núverandi Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Núverandi - Safnari Cutoff (Max) | 100nA (ICBO) |
Núverandi - Safnari (Ic) (Hámark) | 100mA |