Hlutanúmer : | SIHP28N65E-GE3 |
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Framleiðandi / Vörumerki : | Electro-Films (EFI) / Vishay |
Lýsing : | MOSFET N-CH 650V 29A TO220AB |
RoHs Staða : | |
Magn í boði | 10695 pcs |
Gagnablöð | SIHP28N65E-GE3.pdf |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Vgs (hámark) | ±30V |
Tækni | MOSFET (Metal Oxide) |
Birgir Tæki Pakki | TO-220AB |
Röð | - |
Rds On (Max) @ Id, Vgs | 112 mOhm @ 14A, 10V |
Orkunotkun (hámark) | 250W (Tc) |
Pökkun | Tube |
Pakki / tilfelli | TO-220-3 |
Vinnuhitastig | -55°C ~ 150°C (TJ) |
Uppsetningartegund | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 3405pF @ 100V |
Hliðargjald (Qg) (Hámark) @ Vgs | 140nC @ 10V |
FET tegund | N-Channel |
FET eiginleiki | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Afrennsli til uppspretta spenna (VDSS) | 650V |
nákvæm lýsing | N-Channel 650V 29A (Tc) 250W (Tc) Through Hole TO-220AB |
Núverandi - Stöðug holræsi (Id) @ 25 ° C | 29A (Tc) |